Research On Detection Technology For Single Event Effect Of Digital SoC Chip

Under the Nano-node technology,the single-event effect?SEE?of integrated circuits presents the following five changes and challenges:1)new technology and new materials introduce new radiation damage mechanism;2)the critical charge for single-event effect is decreased;3)the single event transient?SET?effect is more significant;4)the charge sharing is increased and the proportion of multiple bit upset?MBU?continues to increase;5)the error rate in the ground environment continues to increase.These changes greatly enhance the sensitivity of the chip to particle radiation,and single event effect has become one of the greatest challenges to the reliability of the chip.In view of the challenges faced by current chip reliability under single event effect and the shortcomings of current research methods,the following studies are carried out on the logic cells and memory cells of the chip respectively:?1?Based on the sparse distribution of sensitive cells of single event effect,the sensitive cells of single event effect in the logic region of the chip is detected by non-correlation observation method with compressed sensing theory.Based on compressed sensing theory and the method of design-for-test,incoherent observation model of logic cells in chip is established.In order to enhance the randomness of observation,we use Bernoulli random matrix with 0-1 distribution as observation matrix,and transform the concept of random observation matrix in compressed sensing into the effective selection of test nodes in the design method of testability,so as to control the generation of test vectors by the coefficient of observation matrix,and finally realize random observation by scanning test.?2?According to the observation results,the method of high-precision reconstruction and location of the sensitive cells of single event effect in the chip are studied in ideal and noisy environments respectively.Basis Pursuit reconstruction method and Basis Pursuit De-Noising reconstruction method are used to study the reconstruction method of the single-event sensitivity signal of 0-1 integer distribution.The relationship between reconstruction accuracy and observation times,observation density,sparsity,noise density and noise amplitude is studied,and the boundary observation conditions needed for accurate reconstruction is found.Finally,taking an AES?Advanced Encryption Standard?cryptographic chip with 16467 gate circuits as an example,the testability design and simulation verification of detection of SEE are carried out.The experimental results verify the correctness of the proposed method.?3?A novel method for locating and correcting multi-bit upset?MBU?error in memory region of chip is proposed by analyzing the correlation of the protected data.This method uses the inner product as the correlation metric to analyze the similarity of the protected data from different dimensions,and construct the model of error location and correction based on the correlation representation.The proposed method performs encoding and decoding in blocks and detection and correction in words,so it can correct one or more bits error.Through analysis and comparison,this method has strong error correction ability,low redundancy overhead and algorithm complexity.Finally,a detection system based on SRAM is designed,and the feasibility of the error correction method is verified by using heavy ion ⁸⁶Kr²⁶⁺as irradiation source.The development of this subject can promote the research on mechanism of single event effect and radiation hardening technology in China,and it is of great significance to space science,national defense security and information security in China.