Analysis Of Anti-irradiation Technology In Power Integrated Circuits

Intelligent power module can integrate power devices and control signals into one,so it is widely used in the design of various driving circuits in aerospace,automotive electronics,household appliances and other fields.In order to improve the performance of the chip and reduce the switching loss of the power device,the working frequency of the circuit needs to be constantly increased.In addition,the effects of events irradiation on the device and even the circuit also occur frequently.Therefore,the high-speed operation of the circuit will make the reliability of the intelligent power module must be taken into account.Due to the influence of space irradiation effect on civil and military spacecraft,the anti-irradiation hardenning technology of high voltage integrated circuit becomes more and more important.Based on 1?m 600 V BCD process platform of CSMC,this paper describes the effect of total ionizing dose effect on 5V MOS devices and the main reinforcement methods.This paper focuses on the reliability of the high speed working state of the level shift module in the high voltage gate driving circuit and the voltage and current pulse caused by single event effect(SEE),and uses Hspice tool of Cadance and ATLAS tool of Silvaco to carry out the necessary simulation.Based on the analysis of the basic principle of narrow pulse generating circuit and the causes of the problems in high-speed operation,the solution of asymmetric narrow pulse is selected to improve the width of the two generated narrow pulses.The improved circuit can improve the pulse width of the identified input control signal from about 100 ns to about 10 ns,with an increase of 85%.The probability of single event burn(SEB)is greatly reduced through the design idea of circuit turn-off priority.In addition,by analyzing the uncertain state output of RS trigger itself,this paper makes it clear that the input end of RS trigger will be affected by single event upset effect(SEU),and the output end of RS trigger will be affected by single event transient effect(SET).A new RS trigger against SEU and SET is proposed through simulation comparison.Compared with the traditional RS trigger,the adverse effects and stability caused by SEE can be improved.Therefore,the asymmetric narrow pulse method and the RS uncertainty elimination method adopted in this design can obviously improve the ability of the high-voltage level shift circuit to resist SEE,which can also improve the reliability of the design circuit while ensuring low power consumption.