Study On Structure Optimization And Characteristics Of 4H-SiC Electrostatic Inductive Transistor

In the past 70 years,the semiconductor industry in the field of circuit design rapid development,higher integration of semiconductor chips to 18 months to double the number of devices to speed up the generation of new electronic products.In contrast,the development of semiconductor materials and semiconductor devices in the field of development is not satisfactory.At present,the semiconductor material market is still the earliest use of semiconductor materials Si,in the semiconductor devices,especially in the field of power electronic devices,thyristors and other old devices is still the mainstream of large-scale production.SiC materials are considered to be the most likely alternative to Si materials in the future of new semiconductor materials,and electrostatic induction transistors are also booming new semiconductor devices.Therefore,the research and development of the electrostatic induction transistor of SiC substrate material is a promising research topic.Based on the development requirements of power electronic devices and the prospect of SiC materials,this paper aims to develop power electronic devices with higher performance and scale of use,according to the National Natural Science Foundation Project.In this paper,the technology of SiC electrostatic induction transistor is analyzed and simulated by Silvaco Tcad software,and the design and optimization of 4H-SiC electrostatic induction transistor are completed,and the optimization of 4H-SiC electrostatic induction transistor is completed by studying the relevant parameters.The main work of this paper includes:1.The advantages and disadvantages of the current performance,process and cost of semiconductor materials are analyzed,and the suitable materials for the future are analyzed.The final selection of 4H-SiC material is taken as the research target and the design of SIT.2.The working principle of the electrostatic induction transistor is studied.The classification of the existing SIT device is analyzed by the Si substrate SIT and the SIT of the planar buried gate structure is selected as the research object.Through the study of SIT,the initial parameters of 4H-SiC SIT are simply set with reference to Si substrate SIT.3.The simulation of 4H-SiC SIT in the design and manufacture of 4H-SiC was carried out by the research and process analysis of 4H-SiC.Including the definition of 4H-SiC substrate materials and the division of the device simulation grid,simulation simulation 4H-SiC,ion implantation impurity doping distribution process.The annealing process parameters of 4H-SiC were optimized by the Optimizer Optimizer embedded in Silvaco Tcad software.Through the material analysis and functional simulation,the final process of the device simulation and the initial parameter settings.4.The related parameters of 4H-SiC SIT were simulated and analyzed by DevEdit,a device editor.Including the five-level operation of the device and the class three-class work status simulation.The simulation of the parameters related to the relevant parameters of the channel and the parameters of the drift region and the simulation of the impurity incomplete impurity model of the SiC material are simulated.5.According to the previous simulation and performance analysis,the optimized device model is obtained,and the performance parameters of the device are extracted from the optimized model simulation.It is obvious that although the 4H-SiC electrostatic induction transistor is still in the design stage,the performance of the 4H-SiC electrostatic induction transistor is better than that of the Si electrostatic induction transistor.