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Design Of Low-Power Radio-Frequency Static Induction Transistor

Posted on:2015-02-12Degree:MasterType:Thesis
Country:ChinaCandidate:L J ZhangFull Text:PDF
GTID:2268330428999004Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Static induction transistor (SIT) is a new type of power device. Compared with other semiconductor devices, it has a range of excellent properties, such as large current capacity, high pressure resistance, low noise, strong anti-radiation, and thus becoming a kind of promising power semiconductor device which has been widely used in many fields [1] This thesis is centered about the design and manufacture of low-power radio-frequency static induction transistor. The main contents are as follows:In this paper, we elaborated the development process of electrostatic induction device, a comparative analysis of the advantages and disadvantages of various device structures were made, and also a simple comparison with other commonly used semiconductor devices.The operational mechanism of SIT, the structure SIT, I-V electrical characteristic, the theory of the current transition and the formation of channel barrier were systematically discussed. Focus on the structural and material parameters of the device, particularly the impact of the channel dimensions and the epitaxial layer parameters on electrical parameters of device. Based on the low-power radio-frequency SIT design requirements, a normally-on surface-gate SIT was designed. According to the designed structure parameters, a new map was drawn.The process flow of this work is organized. Using ion implantation doping on the gate and the source region in order to get a better grid-controlled performance, combined with the process experiment, the process parameters were determined.A comprehensive test on electrical parameters for low-power static induction transistor was conducted. With measured parameters which satisfy the design specifications, this work has a better performance than the index level of similar devices at home and abroad. For example the voltage amplification factors are above65and transconductances are mainly50-325mS according to the different bias conditions (states). Test results show that the design achieved the expected goal, satisfy the needs of practical application.
Keywords/Search Tags:Structural Design, Material Parameters, Static Induction Transistor(SIT), Electrical Performance Test
PDF Full Text Request
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