Study On Compound Semiconductor Negative Differential Device Simulation, Design And Its Application

Heterojunction Bipolar Transistor (HBT) is one of important heterojunction electronics devices. And NRD HBT is the three terminal negative differential resistance device and has such characteristics as the negative resistance, bi-stability and self latch and so on, so people give it many attentions. As early as the year of 1951, Xiao Kelai had brought up the conception of HBT. In 1957, Kroemer had systematically brought up the theories for HBT again, so aroused people' s biggest interests. In 1972, for the development of process of compound semiconductor, there were some reports about HBT begin-to appear, at the same time, the research of HBT onsilicon material was carrying on. Beforemore than ten years ago, the first transistor with polysilicon emitter came out. Because the technical development of GaAs growth on silicon and SiGe alloy, HBT with the new structure appeared. Also HBT resolved the contradiction between emitted efficiency and base resistance resulted from base doping , and push bipolar device forwarded a big step. On the other hand, a long time ago someone found that HBT output characteristic of â…¢ / â…¤ family compound presented negative resistance phenomenon at the big current output with high power. This kind of phenomenon is promoted warmly by the high power and it is caused that the electric current gain and shoulder the coefficient of temperature.Resonant Tunneling Device is a kind of negative resistance device based on the quantum tunneling phenomena, which has the some characteristics such as quickly responding speed, highly working frequency, low power consumption and multi-functional etc, making people focus attention on it. Take RTD for example, the switch frequency between peak and valley can be up to 2.5THz in theory; the switch time has reached 1.6ps.To achieve XOR logic function, TTL circuit needs 33 device; CMOS needs 16,and that RTD only needs 4.Using these characteristics, RTD can be widely used to multi-state memory, A/D converter, multi-value logic, frequency divider, double frequency and so on. Because NDRHBT and RTD has rapidly development and excellent foreground of application, it became urgently to study on RTD or NDRHBT and theirs application . In this dissertation, RTD and NDRHBT design theory, material design and preparation, the structure and technology of device and circuit, RTD's and NDRHBT's measurement and analysis, establishment of circuit model, device simulation of RTD or NDRHBT and theirs relevant RTD's orNDRHBT's circuits for application are studied intensively. Follows are the main products of this thesis:1. InGaAs/ GaAs negative differential resistance device is designed and fabricated with good excellent performance. At the same time, the NDRHBT design theory and experience is systemic summarized.2. Temperature effects on I-V characteristics of RTD have been measured and qualitatively analyzed owing to intrinsically effect.3. Test and analyze the I-V characteristics, bistable characteristic and circuit characteristic of RTD.The material, structure and process of the NDRHBT with gate (NDRHBT) and the neural transistor made by NDRHBT are designed and researched. The NDR HBT Device simulation is performed and studied.