Research On Photoelectric Mechanism And Fabrication Of Static Induction Photosensitive Transistor(SIPT)

The "Static Induction Photosensitive Transistor(SIPT)" which will be discussed, is a kind of new solid photosensitive device. It equals to the parallel of a "Static Induction Transistor(SIT) " and some PIN photosensitive diodes. So it is a photosensitive diode having the electric current enlarge. This paper starts with the Principle of SIT, PN photosensitive diodes and PIN photosensitive diodes, discuss the Property of them. It Lay the foundation for afterwards opening an exhibition discussion the structure and physical meaning of SIPT.In this paper, I Carry on numerical simulation to the SIPT, check against the light electric current with the dark electric current of the emulation, make reference to distribute diagram of the electron and hole concentration, analyze the function, the work principle and I-V characteristic of the new structure device. It haa certain and regulation instruction meaning to the later device design.This text morrow carried on the design of device. I re-designed the landscape and craft parameter, then went on the actual craft experiment and carried on a test, analyzed the experiment result and simulation result, end got conclusion. From it, investigated the function mechanism of the electrostatic induction transistor and predicted its applied foreground.