| With the development of electronic industry, integrate circuit plays more and more important role in various electronic device, and transistors are indispensable components in integrate circuit. The electric properties of transistor, which are affected by the structural size of itself deeply, affect the function of entire integrate circuit. Traditional transistors are made of unorganic semiconductor material, in which silicon is the most common. Although they have excellent electronic properties, their price is high, and structural size has approached the limit of miniaturization. In recent years, the study on the organic semiconductor components made of organic semiconductor material has attracted much attention, and organic components have been applied successfully in many fields such as display driving and so on.Since organic semiconductor devices have been invented and in use, the operational properties of organic static induction transistor (OSIT) are mainly obtained by means of experiment , and its operational properties have not been studied and explained systematacially and theoretically. The theoretical study on OSIT's operational properties has offered relevant theoretic basic for the application of OSIT, which is of great theoretic and practical significance.In this thesis, the physical model of OSIT fabricated was established and simplified to a two-dimension model. The poisson equation was solved by finite element method with appropriate structural parameters and proper boundary condition, and a series of discrete electric potential and field value were obtained. The distributing figures of the electric potential and field were plotted based on the discrete potential and electric field values. The effect of bias voltage and structural size on the operational properties of OSIT has been studied by the analysis of these figures and data, and the quadratic formulas of the one-dimension potential profile along and cross the channel in the vicinity of the... |
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