The Research Of The Operational Properties Of Organic Static Induction Transistor

Semiconductor electronic parts and components have been processed to sub-micron and deep sub-micron level,and it's intergrity of chip processing technology have got the physical limit. Representative.The research of organic electron devices is one of the most pop field in electron devices research, in these years, and there are many report about organic electron devices research emerge in endlessly, some example of organic device applied in the our life common occuranced,we could see that a age of organic device was abroad applied would came very soon.Oganic device has a lot of predominant performances, such as soft texture, cheap cost, frivolity etc. All of these decided that oganic device will surely weaken inorganic device's dominate situation,and won the opportunity for abroad applied.But organic device has some defects on it's performance,such as low switch speed,high driving voltage etc.,still have a lot to improved.Organic static inductive transistor has a vertical structure like static inductive transistor (SIT). And its active layer is made of organic semiconductor material, namely copper phthalocyanine (CuPc). The physical model of CuPc-OSIT was founded according to its sample, the poisson equation was solved by finite element method with appropriate structural parameters and proper boundary condition,simulated the electric potential distribution with different bias voltage and structure parameters,and analyzed the affect that these factors to the performance of the device.We did static analyse and dynamic analyse to the OSIT sample.In the static analyse, we researched some static key parameter, Voltage magnificayion associate with the gate voltage, and with the gate-source voltage increased, the transconductance and voltage magnification decreased, output impendance increased. In addition, we analysised the I-V character of OSIT and found that I-V characteristics with the structure and bias also has relations.All these research builded up theory foundation for further mechanism analyzing of OSIT, offered a sample for further performance optimiziation of OSIT, and theoretically prepared for the device practicality of OSIT both on theory and practice.