Study On Silicon Microchannel Plate Structure And Gain Characteristic

Micro-channel plate(MCP) is an electrical vacuum device which can realize 2-D continuous electron multiplying. It is made up of a series of channels with the ability of continuous electron multiplying which are arranged in some geometric scheme. When particular electric field is put between the input and output ends, it can multiply and amplify the extremely weak 2-D electron images. However, after 90 s, a brand new semi-conductor technique, MCP, is developed by Galileo, US. The biggest breakthrough is separating the basis material from the dynode material. Meanwhile, because of the separation of preparations for micro-channel array technique and continuous dynode technique, the application of MCP is widened and the preparation procedure is more flexible. So far, by the reason that Silicon is widely used in the field of large scale integrated circuit, development of that is relatively deep as well as the preparation technique which attracts amount of researchers to study Si-based MCP etching preparation and dynode fabrication.In this article, firstly, extensive literature research is examined, and the structure character of Si-based MCP, development style and working principles are mastered. By analyzing MCP gain characteristic and studying secondary emission mechanism in channels, establish the mathematical theory models and simulate the models with MATLAB. Theoretically analyze secondary emission characteristics as well as the relationship between MCP circuit gain and other factors. Then for studying the method of enhancing the gain of Si-based MCP, from the view of selection of secondary electron emitter and optimizing the dynode structure, secondary emission characteristics of several different secondary electron emitter material, such as Mg O, Al2O3, Si O2 films, are analyzed and the structure that insulating layer- conducting layer – primary emission layer – secondary emission layer is developed. By theoretically analyzing the selection of each dynode layer material, thicknesses of each layer of dynode are optimized. Finally, on preparation procedure, we utilize the in hand PECVD(plasma-enhanced chemical vapor deposion) device, spinner, lithography machine(fit for Si wafer with the size below 3 inches), RIE device(OXFORD Plasmalab 80 Plus), IPC etcher, etc., and complete etching procedure of Si-based MCP. To fabricate each layer material of dynode, thermal oxidation procedure and atomic layer deposition are adopted. Si-based MCP sample with certain property is achieved.Finally,the paper has made a preliminary experimental method on lasermircromachined hole-arrays into silicon.Proved through principium experiment,this measure method is effective and feasible.