Influence Fators In Photo-electrchemical Etching Of Silicon Microchannel Plate

Micro-channel plate?MCP?is widely used in many fields such as low-light night vision,image photon counters and particle detection.With the improvement of performance requirements,the traditional glass microchannel plate no longer meets the requirements,and it is urgently needed to seek new technology alternatives.Silicon micro-channel plate shows good prospects for its high spatial resolution and other advantages.This paper studies the photoelectrochemical etching technology of silicon micro-channel plate.The factors affecting optical excitation in the photo-electrochemical etching of silicon microchannel arrays were investigated.The spectral response characteristics of n-type silicon photoelectrochemical etching were tested and analyzed theoretically.The effect of the preparation method of the ohmic contact layer on the optical excitation characteristics was studied.Phosphorus diffusion and ion implantation processes were used to prepare the ohmic contact layer.Photocurrent measurements were performed on the two samples.It was found that the photocurrent of the ohmic contact layer prepared by the phosphorus diffusion process was higher than ion implantation processes.The thickness of the ohmic contact layer was measured by angle lap stain method,and the effect of the oxidation process on the ohmic contact layer was investigated.The effect of temperature on the topography of silicon microchannel arrays was studied.It was found that too low temperatures,silicon microchannels stops growth,excessive temperatures,and the terminal pore of the silicon microchannel arrays significantly expanded.The relationship between temperature and hole mobility and diffusion coefficient was discussed.The effect of temperature on the etching rate of silicon microchannel arrays was investigated.The etching depth of silicon micro-channel arrays prepared at different temperatures was measured and the etching rate was calculated.The AC impedance method was used to study the charge transfer resistance of the interface equivalent circuit at different temperatures.The relationship between charge transfer resistance and temperature was obtained.It was found that as the temperature increases,the charge transfer resistance decreases and the etching rate increases.A dark state I-V curve scan was performed on the silicon microchannel array at different temperatures,and it was found that the dark current increased with increasing temperature.The effect of different concentrations of HF solution on the etching rate of silicon microchannel arrays was investigated.The etching rate increased with the increase of HF concentration.I-V curve scanning was performed on silicon microchannel arrays with different ethanol concentrations.It was found that Jps exhibited an extreme value when the ethanol concentration was 5.1 wt%,and it was found that as the ethanol concentration increased,the dark current also increased.The influence of surfactant on the etching rate of silicon microchannel array was studied.The apparent activation energy of silicon etching under different surfactants was obtained by AC impedance method,and the relationship between the apparent activation energy and etching rate was studied,The apparent activation energy of the cationic surfactant HTAC was the smallest,and its etching rate was the fastest among the three surfactants.The effect of surfactant type on the morphology of silicon micro-pass arrays was discussed from the space charge region and the Helmholtz layer.The flat band potential under different surfactants was obtained by measuring the Mott-schottky curve.The relationship between the flat band potential and the surface barrier of the space charge region was discussed.The effects of temperature and concentration of TMAH on the etching rate of?100?plane and?110?plane for silicon were studied.The etching rate of?100?plane and?110?plane for silicon were investigated and calculated by a metallographic microscope.The effect of the etching rate ratio of?100?plane and?110?plane for silicon on the pore shape of the silicon microchannel array was theoretically analyzed.The result shows that the etching rate ratio of?100?plane and?110?plane for silicon is the fundamental factor of the open area ratio of the silicon microchannel array.If the etching rate ratio of the?100?plane to the?110?plane for silicon was greater than 2^1/2,a square-pore with a high open area ratio was obtained.