Preparation Technology Of High Resolution Silicon Microchannel Plate Substrate

Microchannel plate is a two-dimensional electron multiplier and has many advantages such as high gain, low power consumption, long life and so on. It is widely used in gleam night vision, photomultiplier tubes, X-ray detection and other fields. In this paper, the preparation technique of high resolution silicon microchannel plate substrate was investigated. The wafer lithography process and its influence factors were discussed. The mechanism of anisotropic etching of silicon was introduced and the silicon induced pit etching technique was studied. According to the results of the ohmic contact layer, its preparation process was optimized. The morphology of the silicon microchannel array was compared and analyzed under different conditions. The effects on electrochemical etching temperature, HF concentration of silicon microchannel morphology were investigated. The optimum prepare condition was given in the end. Because the processing mechanism of electrochemical etching of high resolution silicon microchannel has many factors and a complex control of technology, so a modeling of silicon microchannel simulation is built through Comsol software. The boundary conditions and the main parameters of the simulation solver were determined. On the basis of the existing literature, the result of the simulation solver by supposing electrochemical etching situation was given.