SOI Variable Optical Attenuator And Dynode Of Silicon Microchannel Plate Initial Research

Based on Wavelength-Division-Multiplexed (WDM) technologies, Variable Optical Attenuator (VOA) is one of the most essential devices in all Optical Networks. And it is also the bottleneck technology to realize the full optical exchange. In this thesisi, a MEMS-type VOA device based on silicon-on-insulator (SOI) technology is proposed. The performance has been simulated by ANSYS and the structure has been optimized. The layouts have been designed and the masks have been prepared. The processes were investigated and the device has been successfully fabricated. The package was investigated and problem related to the reliability has been addressedSilicon microchannel plate is a new technology, which proposed in 1990s. Based on the semiconductor process technique, the new-style continuous dynode device can perform electron multiplier. Dynode is one of the important parts of electron multiplication device. Compared with the traditional glass dynode, the biggest breakthrough is the separation of the precursory material and the dynode choice of material, at the same time also the formation of pore array and the continual dynode. In this thesis, silicon microchannel structure has been fabricated by a patented electrochemical etching method call "auto-undercut". A subsequent oxidation was performed in 1080℃to form an oxide layer on the microchannel. LPCVD has been employed to form the polysilicon thin flim in the microchannel to obtain the continual dynode conducting layer, a layer for the emmsion secomdary electron was supposed to form on the surface of polycrystalline silicon. It is found the plate resistance can reach an ideal value, however, the controlling of the oxidation of polysilicon layer is very hard in pure oxygen atmosphere and further investigation is needed. The body conductive mode has also been investigated. The measurement showed that the plate resistance is very low and the temperature tossed rapidly when the test started. So the results indicated that body conductive mode is not suitable for the silicon microchannel plate...