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Physics Of Non-Volatile Memory And TCAD Simulation

Posted on:2012-09-26Degree:MasterType:Thesis
Country:ChinaCandidate:H ZhongFull Text:PDF
GTID:2218330338970964Subject:Circuits and Systems
Abstract/Summary:PDF Full Text Request
Flash memory, which is based on the traditional floating gate concept, are the mainstream and dominant devices in current non-volatile memory market. Since Flash Memory are a representative NVM, this paper will explain the basic concept of NVM by taking the Flash Memory as an example. Lots of micro physics mechanism in NVM device will be explained including the degeneration of NVM performance. Three kinds of way of realizing non-volatility has been discussed:Floating gate, SONOS, and Nano-Crystal, also the weaknesses and strengths of these three NVM has been compared. At the end of this paper,TCAD simulation of NVM performance has discussed and explained.
Keywords/Search Tags:NVM, Flash, Floating Gate, SONOS, Nano-Crystal, FN Tunneling, CHE, Program, Erase, Oxide, Trap, Degeneration, TCAD simulation, Sentaurus
PDF Full Text Request
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