Physics Of Non-Volatile Memory And TCAD Simulation | Posted on:2012-09-26 | Degree:Master | Type:Thesis | Country:China | Candidate:H Zhong | Full Text:PDF | GTID:2218330338970964 | Subject:Circuits and Systems | Abstract/Summary: | PDF Full Text Request | Flash memory, which is based on the traditional floating gate concept, are the mainstream and dominant devices in current non-volatile memory market. Since Flash Memory are a representative NVM, this paper will explain the basic concept of NVM by taking the Flash Memory as an example. Lots of micro physics mechanism in NVM device will be explained including the degeneration of NVM performance. Three kinds of way of realizing non-volatility has been discussed:Floating gate, SONOS, and Nano-Crystal, also the weaknesses and strengths of these three NVM has been compared. At the end of this paper,TCAD simulation of NVM performance has discussed and explained. | Keywords/Search Tags: | NVM, Flash, Floating Gate, SONOS, Nano-Crystal, FN Tunneling, CHE, Program, Erase, Oxide, Trap, Degeneration, TCAD simulation, Sentaurus | PDF Full Text Request | Related items |
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