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Flash Memory Low Temperature Erase Failure And Rescreen

Posted on:2011-08-15Degree:MasterType:Thesis
Country:ChinaCandidate:Y L FanFull Text:PDF
GTID:2178330332966336Subject:Electronics and Communications Engineering
Abstract/Summary:PDF Full Text Request
The topic is to analyze flash memory erase failure at cold temperature, as well as the reliability analysis. The target is to find out a way to prevent cold temperture erase failure, improve cold temperature yield to make sure the reliability of shippment. To achieve the target, a series of experiment and data collection & analysis is implemented on colder erase failure units and good units.Firstly, the paper introduce the related knowledge about memory reliablity, including failure time, theory, purpose and category, as well as Flash Memory'reliabilty analysis and reliability test method. Secondly, the paper focus on the analysis of cold temperature erase faiure. Lastly, based on the cold temperature erase failure possible reason, a sereis of experiment are conducted to make out an corrective action, and finally to improve the quality at cold temperature and also ensure the good reliability requirement. We may get a more deep understand on Falsh memory theroy by this analysis and experiment.
Keywords/Search Tags:PROGRAM, ERASE, Vth, Over-Program, Over-Erase, Pre-Program, Soft-Programming, Fowler-Nordheim tunneling, Cycling
PDF Full Text Request
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