Design Of RF Power Amplifier |
Posted on:2007-10-31 | Degree:Master | Type:Thesis |
Country:China | Candidate:L Li | Full Text:PDF |
GTID:2178360212965413 | Subject:Circuits and Systems |
Abstract/Summary: | PDF Full Text Request |
With the development of information technology, people hope that they can communicate with anyone at anytime. Digital communication technology makes the information society into reality.The primary function of RF power amplifier is to amplify the RF signal with high efficiency. It is widely used in diversified radio transmitters. The essential of amplifying signal is to transform DC power into high frequency power.The thesis introduces the design of a 2.4-GHz CMOS power amplifier based on a 0.18um CMOS technology for Bluetooth system and another design of a 380MHz BiCMOS power amplifier based on a 0.35um BiCMOS technology Trunked system. They are both implemented in two-stage circuit but biased in Class A and Class AB. Part of bias circuit is integrated in the whole chip. The simulation results indicate the possibilities of their application in RF transceiver system. |
Keywords/Search Tags: | Radio Frequency Circuit, Power Amplifier, BiCMOS- Process, CMOS- Process |
PDF Full Text Request |
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