Design Of Silicon-based Radio Frequency Power Amplifier For 5G Communication

It is well known that the higher the operating frequency of a communication system,the faster the signal transmission rate and the greater the channel capacity.Due to the occupation of spectrum resources,the mobile millimeter-wave system of K/Ka band of 24.75~27.5 GHz and 37~42.5 GHz is adopted to support high-throughput fifth-generation cellular network communication.The silicon-based radio frequency integrated circuit manufacturing process has attracted attention for its excellent characteristics and low cost.However,It is difficult to integrate high-power capacity modules due to the drawbacks of silicon-based processes,such as power amplifiers and high-power switches.Bottlenecks are encountered in implementing fully integrated transceiver modules.Based on the above considerations,two high-power and broadband power amplifiers for 5G communication are designed based on two kinds of silicon-based processes.This circuit is of great significance for promoting the implementation of a fully integrated multi-band 5G communication transceiver.This thesis firstly compares the structure and principle of CMOS and SiGe BiCMOS silicon-based processes,and describes their characteristics in power amplifier design.Then,the basics of silicon-based power amplifier design are introduced,and the physical limitations of designing power amplifiers under current silicon-based processes are analyzed.Next,a power amplifier is designed based on the 65 nm CMOS bulk silicon process.Transformer-based power combiner is used to increase output power.Transformer power combiner technology can be divided into voltage combiner and current combiner.In this design,the current power combiner is adopted.Current power combiner technology has smaller parasitic parameter sensitivity than voltage power combiner.Therefore,it is more suitable for multi-channel power synthesis systems.Transformer matching is used to increase the operating bandwidth of the circuit,and the AM-PM distortion of the circuit is compensated by staggering the matching pole of the transformer.The PA has a maximum peak power added efficiency(PAE)of 29.3%and a core area of only 0.206 mm~2(0.34×0.606 mm~2).In the case of 1 V power supply and 28GHz operating frequency,the power amplifier's saturated output power is 18.2 dBm,1dB compression point output power is 16 dBm.At 24 GHz,the AM-PM distortion at the1 dB compression point reaches a minimum of 2.4°.Finally,a wideband power amplifier is designed based on 0.13?m SiGe BiCMOS.Cascode structure and transformer power combiner structure are both used to increase the output power of the circuit.An improved 8-shaped power combiner is proposed and designed.The 8-shaped power combiner reduces the energy leakage of the amplifier,thereby reducing the interference that can be caused by other circuit modules.Compared with the traditional 8-shaped power combiner,the proposed structure has better input impedance consistency.At 31 GHz,the PA has a peak PAE of 28.1%,a saturated output power of 21.4 dBm,and an output power of 20.3 dBm at a 1 dB compression point.The PA has a-3 dB bandwidth of 13 GHz(25~38 GHz)and a core area of 0.344 mm~2(0.4×0.86 mm~2).