Research And Design Of Amplifier Based On SiGe BiCMOS Process

With the development of mobile communication technology and the advent of the 5G era,the transmission rate of information is getting faster and faster.As a front stage of the receiver of the mobile communication system,the low noise amplifier plays a non-negligible role in the communication system.Low-noise and wide-band amplifiers can effectively increase the maximum transmission rate of the channel,while reconfigurable amplifiers can be compatible with different communication standards and meet the needs of different application scenarios at a low cost.In addition,with the continuous progress of semiconductor technology,SiGe BiCMOS technology can be compatible with Si technology and provide high-performance HBT transistors,which has become a research hotspot.In this paper,by studying the characteristics of Huahong's 0.18 um SiGe BiCMOS process and the active and passive components included in the process,the following three aspects of works are carried out to realize the low noise amplifers,wideband amplifers and reconfigurable amplifiers:1.Design and implementation of a 10 GHz two-stage cascaded low noise amplifier:Based on noise theories,a low noise amplifier using MOSFET with a center frequency of 10 GHz is designed by performing minimum noise matching at the input and maximum output matching at the output of the amplifier.The monolithic has been processed and tested.The test results show that the gain of the amplifier at the center frequency is 10.15 dB and the noise figure is 4.09 dB.In the range from 8.1GHz to 12.4GHz,the return loss of the input and output are better than-10 dB,and the relative bandwidth is 43%.The differences between simulation and measurement results have been analyzed.2.Analysis and design of a 2-20 GHz distributed low noise amplifier: A negative impedance network and a peaking inductor are used in the design of a distributed low noise amplifier,which increases the bandwidth and improves the gain flatness.The working frequency range of the distributed low noise amplifier based on HBT is 2-20 GHz.Within this range,the gain flatness is only ± 0.375 dB,the noise figure is between 2.7dB and 4.2dB,and the average gain is as high as 27.648 dB.3.Analysis and design of a center frequency tunable amplifier: Based on the reported inductor-inductance-capacitance(LLC)tunable matching filter network,a capacitorinductance-capacitor(CLC)tunable matching filter network with higher flexibility is proposed.The center frequency can be tuned while changing the capacitance of the varactor.Based on this structure,three different frequency tunable amplifiers,including a single transistor cascaded amplifier,a cascode cascaded amplifier and a multi-stage cascaded amplifier are designed,which verify the universal applicability of the CLC tunable matching filter network in circuits with different structures and multi-stage.When the control voltage of the multi-stage cascaded amplifier is changed from-1V to 1V,the center frequency can be changed from 7.8GHz to 12 GHz with the tuning range of 42%.