Design Of Sense Amplifier In Flash Memory

Microelectronics technology has developed rapidly since the transistor appeared in 1950s.Now it enters the age of Ultra Large Scale Integrated Circuit (ULSI) and system integration, it has been the sign and foundation of whole information age. It can be said that today's information society wouldn't exist without the microelectronics. Undoubtedly, 21st century will be the century of information, so in the 21st century, microelectronics technology will obtain high-speed improvement. In the large family of microelectronics, the advancement of one of its members can be seen by all of us, that is Flash Memory . Following the enhancement of process technology, the feature size of device becomes smaller, which make the density of Flash Memory and at the same time performance improved. Flash Memory becomes an indispensable kind of products of semiconductor memories for its advantage of high speed. Its usages in today's computer communication and consumer electronics are wide and more popular.This article firstly describes the structure and operational principle of a Flash Memory and analyzes the commonly used structures of its peripheralcircuits.....sense amplifier. Then emphasizes on illustrating the design of twonovel structures of sense amplifier applied in a 3V full-CMOS Flash Memory, and then simulate them using Innosis 0.15um process technology and obtain satisfying simulation results under different conditions.