Key Modules Of High Speed Low Power Flash Memory

Flash memory is one of the most essential devices for high-end consumer electronic products. They are widely used in personal computers, mobile phones, digital cameras and other products. With the continuous improvement of reading and writing frequency of flash memory, as well as the characteristic size decreasing, the stability of the flash memory and the speed bottleneck to improve performance faces enormous challenges. In addition to the development of more advanced process and advanced storage unit, the key circuits design of flash memory have become the approaches to break the speed bottleneck.Combined with the practical engineering problems of the project, based on today’s mainstream flash memory architecture, the structure and working principle of the flash unit is described. By optimizing the key peripheral circuits which have a crucial impact on flash memory performance, including the sense amplifier, the charge pump system, as well as the band-gap reference, the high-speed low-power flash system design is realized.For the core circuit sense amplifier, we used the multi-phase pre-charge technology and a new clamp circuit to improve the reading speed of flash memory; for the charge pump system, we designed a leakage detector module to achieve the high-speed low-power requirements; we used dual band gap reference to solve the conflict problem between high-speed and ultra-low-power for band gap reference.We designed a64Mb device based on the process of GSMC. We meet the design requirements after the simulation and post simulation by hspice for key circuits.