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Research On Single Event Transient And Test Technology Based On 28nm CMOS Planar Device

Posted on:2021-06-03Degree:MasterType:Thesis
Country:ChinaCandidate:A Q WuFull Text:PDF
GTID:2518306548493454Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Radiation-resistant integrated circuits play an indispensable role in ensuring the nor-mal operation of the system in space applications.Single Event transient(SET)have become the main cause of soft errors in space applications.The previous research work mainly focused on the 65nm and above processes,and simulated or experimentally stud-ied the mechanism of SET and single event multi-transient(SEMT)characteristics.It was found that factors such as propagation induced pulse broadening and parasitic bipo-lar amplification effect make the trend of SET pulse width With increasing complexity,the average width and minimum width of SETpulses decrease as the process size shrinks.The applicability of previously widely used measurement circuits under advanced tech-nology remains to be discussed.The development of high-performance radiation-resistant integrated circuit chips requires experimental data support in advanced technology.In this paper,based on the 28nm bulk silicon planar device technology,the rela-tionship between the critical pulse width and propagation delay of SET pulse lossless propagation is studied,and the linear relationship model of the two is obtained.At the same time,it is found that the critical pulse width and the minimum energy propagating pulse width are equivalent.In order to study the characteristics of the SET pulse width,a heavy ion ground radiation experiment was carried out on the test chip manufactured in the 28nm process.The experimental results of 5 different particles compared the reduc-tion of the sensitive volume of the device and the reduction of the critical charge.The influence of SET also proves that the contribution of smaller width pulses to the circuit is increasing.Based on this discovery,three SET pulse measurement methods is summa-rized and analyzed,and a pulse stretcher is proposed to overcome the shortcomings of the higher threshold of the pulse capture measurement circuit,which is helpful to improve the accuracy of the SET cross-section evaluation.
Keywords/Search Tags:Integrated Circuit Radiation Effect, Single Event Transient, Transient Pulse Measurement
PDF Full Text Request
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