Study On Single Event Transient Of Reference Source Based On Bipolar Process

With the development of human exploration,the reliability of electronic circuit system in spacecraft has become one of the most important issues in circuit design.Among them,the power circuit as the power source of the system,its reliability directly affects the stability of the whole system.However,high energy particles in space radiation environment will cause radiation effect in analog power supply circuit,and continue to propagate through the topology,which seriously affects the performance of electronic equipment.Among them,the proportion of faults caused by single event transient effect is gradually increasing.Therefore,it is very important to study the single event transient effect of power supply circuit.Starting from the application and research significance of analog power circuits,this paper introduces the research status at home and abroad,compares the classification and definition of single event effect from the characteristics of circuits,and analyzes the difficulties and significance of single event transient research.The mechanism of single event transient effect is described in detail.The working principle of the reference source is introduced in detail.The structure of the bandgap reference used in this paper is proposed based on the common bandgap reference circuit structure.The index parameters of the reference source are given and the basic characteristics are simulated.The dual exponential transient pulse source injection model is used to simulate the circuit level single event transient effect of single node injection and double node injection respectively.The layout level reinforcement design method is introduced,and the RC filter structure and targeted reinforcement method are adopted to achieve better reinforcement effect simply and efficiently.The main contents of this paper are as follows:(1)Based on 180 nm bipolar process,the mechanism of single event transient effect is analyzed from device level simulation.Under the condition of 10 V supply voltage,a bandgap voltage reference circuit is built,and the basic performance of the circuit is simulated.(2)For the bandgap reference circuit,the circuit response of single node injected with transient pulse is simulated: four quantities are extracted to characterize the waveform characteristics,and given appropriate weights after normalization,a sensitivity characterization parameter D is proposed to quantify the single event transient sensitivity of the node.The reason why the sensitivity of single event transient is different is analyzed from the circuit topology and principle.The circuit response of two node injection transient pulse is simulated,and the differences and internal reasons of output transient voltage waveform of single node injection and double node injection are compared.(3)The resistance capacitance filter network is used to determine the parameters of the filter network.The circuit is globally strengthened,and the most sensitive node 3 of the circuit is specifically strengthened.The effect of single event transient harden reinforcement is better.