Research On EMP Interference Effect And Experimental Study Of CMOS Cascaded Inverter

As the modern society improves and develops,Electronic equipment and systems with integrated circuits as the core have been used more and more widely.However,the increasingly complex electromagnetic environment which has an increasingly greater impact on integrated circuits with decreasing feature sizes,and has become a major research hotpot in the reliability field of modern microelectronics.Strong electromagnetic pulse is extremely easy to couple into the electronic system through the “front-door” and “back-door” of the electronic system,which induces strong non-linear effects in the electronic system,thereby causing temporary or permanent functional degradation and damage to the electronic system,and even causing electronic system burnout of internal component.Among them,high power microwave and square wave pulse are two typical types of strong electromagnetic pulses.In addition,as the feature sizes of semiconductor devices and microelectronic circuits decrease,the probability of interference and damage to electronic systems from electromagnetic pulse also increases.Therefore,research on the interference and damage mechanisms of strong electromagnetic pulse to semiconductor devices and their simple circuits are the basis of electromagnetic pulse effect of electronic system.This article starts the most basic and extensive CMOS cascaded inverters for modern digital integrated circuit applications,and studies the interference and damage effects of CMOS cascaded inverters from both numerical simulation and experimental aspects.The main results include the following aspects:1.A semiconductor device and process simulation software Sentaurus-TCAD was used to establish a three-dimensional device model of CMOS cascaded inverters in a 0.35μm N-well process.The correctness of the model was verified by static and transient characteristics.Considering the model of device self-heating 、 mobility and carrier generation-recombination,the numerical simulation method is used to simulate the transient electro-thermal process in the CMOS cascaded inverters under the action of HPM.The thermal effects、the variation of the burn-in threshold and the effect of HPM frequency and pulse width on temperature.The results show that the Joule heat caused by the forward current formed at the small radius of curvature of the junction region between the HPM negative half-cycle source and the substrate is the main reason for the internal temperature rise of the device.The internal peak temperature and heat generation of the device are negatively related to the HPM frequency and positively related to the HPM pulse width.In addition,The damage power threshold of the device decreases with the increase of pulse width of the HPM,and the damage energy threshold increases with the increase of the pulse width.The obtained law is in good agreement with the experimental results reported in the literature.2.The CD4069 UBCN inverter chip was used as the core to design the CMOS cascaded inverter printed circuit board as the experimental sample for EMP control experiments.The damage threshold and damage rule of this CMOS cascaded inverter under different EMP conditions were obtained.The results show that the strong electromagnetic pulse will cause its function to be degraded and damaged after exceeding the damage threshold of the experimental sample,and the larger peak value of the strong electromagnetic pulse,the greater impact on the sample function;the damage threshold of the experimental sample under different experimental conditions is different,but under the same experimental conditions,the damage threshold of the experimental threshold of the experimental sample is same,and there is no cumulative effect.Under the influence of the strong electromagnetic pulse effect,the second-stage inverter is more damaged than the first-stage inverter.The damage effect and mechanism of HPM of CMOS cascaded inverters,the results of experiments on the change of failure threshold and EMP damage effect proposed in this paper provide theoretical and experimental basis,and has certain reference value.