Study Of The Simulation On The Damage Characteristics Of Pin Diode Under High Power Microwave

In recent years, the development of semiconductor science and technology promoted the development and application of new devices, but with the increasing of the integration of electronic circuits, the electromagnetic pulse and high power microwave damage sensitivity is also increased. In industrial applications,the high power microwave source system will produce high power microwave leakage.This part of energy will coupled into the system through the transmission line of microwave to disturb and damage the semiconductor devices on the circuit.PIN diode reverse breakdown voltage is high, can withstand the high power,and it’s reliability and stability is good to be widely used in civil and military fields.It is necessary to further study high power microwave effects on the PIN diode that is extensive applicated in the functional circuits.Firstly, the PIN diode working principle,physical model and structure are introduced. Two-dimensional simulation model of PIN diode is built using device simulation software.The damage effect and mechanism of electromagnetic pulse on PIN diode is studied. This paper analyzes the relationship among current density, electric field intensity, lattice temperature, damage energy and electromagnetic pulse parameters.The simulation results show that the shorter the rise time and the higher the initial bias voltage is, the easier breakdown taken. The threshold of damage and burnout increased with the increase of the voltage amplitude and the decreased of the rise time.In the last chapter, the damage behavior of diode under the action of sinusoidal voltage is simulated.Devices are more likely to be forward burned when the frequency is low. Rising temperatures reches to the melting point of silicon. Devices are more likely to be reverse burned when the frequency is high. If the second breakdown occurs,the device may instantly be burned, if not,burning out will take more time.