Research On The Damage Effects Of MOSFET Induced By The Intense Electromagnetic Pulse

With the increase of the integration level and the reduction of geometric size,semiconductor devices tend to be more easily influenced by ElectromagneticInterference (EMI). The increasingly complicated communication environment is morelikely to introduce EMI into electronic equipments and cause logic errors or even devicefailures. Being the important components of EMI, High Power Microwave (HPM) andElectromagnetic Pulse (EMP) can easily lead to electrical breakdown or thermalbreakdown of a device. Therefore it is crucial to investigate the burnout and breakoutphenomena induced by HPM and EMP.In this thesis, a MOSFET model is established with appropriate parameters byusing the two-dimensional device simulator software ISE-TCAD. The damage effectand mechnism of MOSFET induced by HPM and EMP are analyzed based on thismodel. Results show that under EMP injection the hotspot locates at drain-substrate pnjunction. While under HPM injection the device appears to have two distincttemperature-rising hotspots with regard to the negative and positive half-periods of thesinusoidal voltage signal. The damge position for HMP also appears at drain-substratepn junction.The relationship of the microwave damage power P, the absorbed energy requiredto cause the device failure E, and the pulse width is obtained by utilizing the curvefitting method. A comparison between the microwave pulse damage data and the dcpulse damage data for the same MOSFET is carried out. It is found that with the samepulse amplitude, MOSFET stays in conductive heating state under HPM injection. Thusthe damage duration, damage threshold appears to be greater than that under EMPinjection.This research provides theoretical support for semiconductor device protection. Italso lays a good foundation to the experimental study in future work.