Correlation Between Different Strong Electromagnetic Pulse Parameters And Integrated Circuit Damage

With the increasing of integrated circuit integration and the continuously reducing of the device feature size,the damage effect of electromagnetic pulse on the integrated circuit becomes more and more obvious.Electromagnetic pulses can be coupled into the integrated circuit through metal interconnects or hole,coupling large induced electromotive forces or energy into the integrated circuit,causing interference or damage to the integrated circuit.The electromagnetic pulse damage effect of integrated circuit is mainly reflected in the metallization damage and the change of the electric field and thermal field in the integrated circuit.For the metallization damage,the damage law of the interconnect line under the action of electromagnetic pulse is studied.For the electrothermal effect of the integrated circuit,the electromagnetic pulse damage law of the CMOS inverter is studied.The classification of electromagnetic pulse and the waveforms of different types of electromagnetic pulses are first given.At the same time,the key parameters of electromagnetic pulses with different waveforms are studied.Then the damage effect of electromagnetic pulse on integrated circuit is analyzed,the damage mechanism and damage mode of circuit and device are given.Aiming at the electromagnetic pulse damage law of interconnects,the electromigration effect is mainly analyzed,electromigration is the main cause of interconnect failure.The induced factors of electromigration are current density and temperature.Firstly,a metal interconnect simulation model is established by the combination of Maxwell's equation and the electromagnetic simulation software COMSOL.The effects of electric field strength,delay time and time decay constant on the induced electromotive force of the metal interconnect are studied.The simulation results show that when the electric field is in the form of Gaussian pulse,the waveform of the induced electromotive force on the interconnect is very similar to the sinusoidal waveform.The greater the electric field strength,the larger the induced electromotive force amplitude on the metal interconnect.The delay time has no effect to the magnitude of the electromotive force,but the longer the delay time,the longer the time it takes for the induced electromotive force to reach the peak.The larger the time decay constant,the smaller the magnitude of the induced electromotive force and the shorter the time during which the induced electromotive force reaches the peak.Then the effects of pulse frequency,pulse repetition rate and pulse polarization angle on the electric field and the thermal field distribution of the interconnect are studied.The simulation results show that the smaller the electromagnetic pulse frequency is,the more the interconnect coupling energy is,the higher the interconnect temperature is.The higher the pulse repetition rate,the faster the interconnect temperature rises.The rate of temperature rise on the interconnect is faster during the horizontal polarization angle then vertical polarization angle.Aiming at the electromagnetic pulse damage law of integrated circuits,CMOS inverter is researched.CMOS inverter is the basic unit module of digital integrated circuit and the structure is simple.Firstly,the damage mechanism of inverter is analyzed,the latch-up effect which is is the main cause of inverter failure is mainly analyzed.The device simulation software Sentaurus is then used to establish the inverter model.The transient characteristics of the inverter is simulated,the simulation results show that the built inverter model works normally.Then the effects of the power,pulse width and frequency of the injected electromagnetic pulse on the performance of the inverter are studied.The simulation results show that when the power is low,the performance of the inverter is only temporarily interfered,and its operation can resume normal when the EMP no longer acts.When the power reaches a certain threshold,the performance of the inverter will be permanently damaged.The larger the pulse width and the smaller the frequency,the smaller the damage threshold of the inverter.Finally,the influences of pulse power and frequency on the internal electric field and the thermal field distribution of the inverter is studied.The simulation results show that when the pulse power is low,the power supply current rises slowly only during the electromagnetic pulse action time,and then decreases rapidly.And the peak temperature inside the inverter rises only when the EMP acts,and then rapidly decreases to the initial temperature.When the power reaches a certain threshold,the internal temperature of the inverter will rise rapidly to reach the burning temperature of the device.The total amount of charge injected into the substrate and the concentration of excess carriers inside the inverter will be affected by the pulse frequency.the higher the frequency,the lower the concentration of excess carriers,so the latch-up effect will be induced with a larger voltage or power amplitude.