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Research And Development Of 0.13um Process Anti-radiation Input-output Cell Library

Posted on:2021-02-25Degree:MasterType:Thesis
Country:ChinaCandidate:D ZiFull Text:PDF
GTID:2428330626956068Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In the radiation environment of cosmic space,integrated circuits used in aerospace systems will be affected by various radiation effects.When designing integrated circuit chips,the reliability of radiation resistance is also an indispensable part of the design process.In this paper,the method of semi-custom design is used,and the use of the proven cell library for design can ensure the chip's reliability requirements for radiation resistance to the greatest extent.The input and output cell library is very important and the design is relatively complex.The input-output unit circuit needs to provide sufficient output drive current for the chip,accept external input signals,and also provide a path to discharge current for ESD protection.The input and output cell library of the radiation hardening designed in this paper is based on the 0.13 um process,and the designed input and output cell library has anti-irradiation capability.The radiation-hardened input and output unit library includes input unit,output unit,power supply and ground unit.In this paper,the input unit circuit in the input and output unit library includes a radiation-hardened Schmitt trigger and a high-low voltage conversion module;the output unit circuit includes a low-high voltage conversion circuit and an output driver stage,in which the output driver The stage is a three-state buffer,and the low-to-high voltage conversion circuit uses a six-tube structure;the power and ground unit and the ESD protection unit include the GGNMOS tube secondary protection structure and the Power_Clamp main protection structure,and also include the power-up sequence control circuit.In this paper,for the total dose effect,the ring gate NMOS tube is used instead of the straight gate NMOS tube,which can effectively suppress the negative effects of leakage current and effectively resist the total dose effect.Then,for the single-particle effect,the radiation-hardened structure is used for the combinational logic gate circuit and Schmitt trigger.The radiation-hardened six-tube structure adds reinforcement up /down networks and high / low level error correction at sensitive nodes The network can effectively protect the single particle effect.
Keywords/Search Tags:I/O cell, anti-radiation, TID, SEE, ESD
PDF Full Text Request
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