Research On Radiation Effects And Reinforcement Design Of Ferroelectric Memory

Ferroelectric random access memory(FRAM) is a kind of RAM structure memory which base on the ferroelectricity. FRAM integrates the ferroelectric thin film with thesemiconductor process technology. As one of the advanced semiconductor memories, FRAM has atvantage on high speed, low power consumption, non-volatile, anti-radiation characteristics, have been used in the field of IC cards, embeddedmicroprocessors, RFID, space technology. In the military and aerospace, FRAM got high attention of science researchers from all over the world for the anti-radiation property.The main contents of this paper are as follows:(1)Study on the principles of polarization of ferroelectric thin films, the reading and writing unit structure and timing, determine the 2T2 C structure to improve the design reliability. And studide about the ferroelectric memory circuit, the role of each module. As well as the principle of the circuit structure.(2)Since the schematic of FRAM is composed of the CMOS device. This paper set up the device modeling of NMOS transistor, simulation of the IV characteristic, and the drain current of the single event effect thoughe the device simolation. In the condition of different location, direction of incidence, and the impact of the incident particle energy time on the drain current size.(3)Study about the SEE, the principle of the single-particle latche up and TID, and the corresponding anti-radiation reinforcement measures, and use the circuit simulation on a single event upset reinforcement measures for verification. proposed strengthening measures for total dose effect.(4)Based on CSMC(CSMC) 0.5μm CMOS process and combining ferroelectric thin film preparation which made by the University of Electronic Science and Technology of china, completed a 512 bit parallel anti-radiation ferroelectric memory schematic design and layout,finished simulation of the schematic and layout.