Research On Characteristic Parameters Of VDMOSFET's Anti Anti-radiation Using On Screen

Along with the studying of low frequency noise of electronic components, people discovered that the low frequency noise is sensitivity to reflect the latent damages of electronic components. So people can use low frequency noise of electronic components as a reliability way. As a way of charactering the reliability, low frequency noise of electronic components has excellences of common to apply, high sensitivity, nondestructive and quick to measure, and became a brief and effective tool to character the reliability of electronic components.This paper introduce the ionization radiation effects of VDMOSFET, the physical mechanism of 1/f noise origin, based on the theories, measuring the electricity parameters, noise parameters and radiation experiments, and getting a great lot of VDMOSFET data. For the ability of anti-radiation of VDMOSFET that used 1/f method have studied further, and obtained the study conclusions as following:1. The radiation experiments of VDMOSFET, with different channel and type, including the n type, p type, military and commerce products have been made using cobalt-60 as irradiation source. The results demonstrated that there are obvious relationships between 1/f noise of pre-radiation and the changes of threshold voltage and transconductance after radiation. Theories study have shown that the magnitude of 1/f noise becomes large with the dose of radiation adding, which predicates the more tapped charges induced by radiation and its distribution is also changed.2. Compared electricity parameters with noise parameters post-irradiation experiments, advancing theory analysis shows that threshold voltage drift and transconductance degradation post-radiation. Compared the sensitivity between the electricity parameters with noise parameters, proved that the correlation between electricity parameters and noise parameters.3. The work done above showed that people can use 1/f as an analysis tool to character the ability of VDMOSFET's anti-radiation. People can estimate, character and screen VDMOSFET's quality, reliability and the ability of anti-radiation through measuring 1/f noise of VDMOSFET.