Research On A SOI CMOS Electronic Pulse Measure Circuit Of Time Interval With Good Anti-Radiation

With the quick development of the space navigation in 1990s, there has a higher requirement to the electronic pulse measure circuit of time interval which is the key component of the distance measure instruments. The distance measure instruments made by traditional bulk silicon CMOS process is not able to work in the hard environment because of the restriction of the bulk silicon material structure. The environment of the space radiation and high temperature will degrade the measure precise and the work speed of the instruments. The appearance of SOI(Silicon on Insulator) technology has changed this situation. In this paper, the SOI technology is applied to the integrated circuit fabrication. SOI technology overcomes some disadvantages of bulk silicon because of its inherent structure. It has the advantages such as no latch-up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti-radiation.SOI technology is adopted to fabricated the chip of the circuit in this paper. Firstly, SOI MOSFETS are simulated by SPICE software and BSIM3SOI model________________________ Abstract_________________________________to provide more data for the basic device of the circuit. Secondly, on the basis of clarify the working principles, the optimal design to anti-radiation is carried out and the optimal implant dose of F* to Si02 is found by experiments. In the end, the layout design is carried out and the chip of the circuit is fabricated and tested by the optimal process. The results show that the circuit has a good performance on anti-radiation when the implant energy is 90keV and the dose is 1 X 1015/cm2, which restrain the drift of threshold voltage effectively.