Numerical Simulation Of The Influence Of Temperature On The Single Event Transient Charge Collection Of NMOSFET

In this paper,the MOS transistor was studied,based on TCAD simulation analysis of single event transient,systematically investigate the effects of temperature,linear energy transfer(LET),electric field,and angle of incidence,and the effects of synergistic between temperature and LET value,electric field and incident angle on the single event transient effects and charge collection were systematically studied.The specific research content and innovation are mainly reflected in the following aspects:The effects of temperature on single event charge collection were analyzed based on simulations.There is a parabolic relationship between temperature and charge collection.As the carrier mobility increases with lower temperature,higher kinetic energy is obtained during the movement and secondary ionization occurs,more charges are induced,secondary ionization decreases with increasing temperature,but the internal electric field of the device increases,as a result,the amount of charge collected first decreases and then increases with increasing temperature.In addition,temperature-based research studies the synergistic between temperature and other factors.Increased temperature promotes the effect of LET on the collection of charge;the increase of the incident angle is equivalent to the increase of the effective LET value,so the temperature rise promotes the effect of the incident angle on the collection of charge;the LET value has a great influence on the change of the current duration at high temperature.Temperature significantly affects the effect of the electric field on single event transients;The effect of temperature on single event transients is analyzed based on simulations.The peak value of the transient current decreases with increasing temperature,as the temperature decreases,the carrier mobility increases and the initial current increases,transient duration increases with increasing temperature,with increasing temperature,the diffusion coefficient of carriers decreases.In addition,the synergistic between temperature and LET values,electric field and incident angle was studied,the LET value has a great influence on the transient current peak at low temperature.The increase of the incident angle is equivalent to the increase of the effective LET value,therefore,the influence of the incident angle on the single event transient has a temperature dependence.In this paper,a single-particle transient and charge-dependent temperature dependence simulation of NMOSFET is studied.Some results were obtained,revealing the correlation between carrier mobility and temperature,single-particle transients and charge collection,which laid the foundation for the future numerical simulation of MOSFET single-event transient effects.