Research On Mechanism Of Charge Collection In Single Event Effects For SOI MOSFET

With the development of semiconductor technology, more and more advancedsemiconductor devices are used in space, and single event effects are becoming asignificant reliability concern for microelectronic devices. As a kind ofradiation-hardened method, Silicon-on-insulator (SOI) has the advantages of low powerconsumption, high speed, no latch-up, low sensitivity to single event effects (SEE) andtransient radiation. However, because of the unique structure of SOI MOSFET, there area variety of parasitic effects, such as parasitic bipolar transistor effect, which seriouslyaffects the sensitivity of devices to SEE. Therefore, the study of charge collectionmechanism of SOI MOSFET in SEE would improve the model and establish anaccurate on-orbit calculations algorithm of single event upset for advancedsemiconductor devices.First of all, based on the summary of the structure and characteristics of SOIMOSFET, single event effects of bulk MOSFET and SOI MOSFET are compared.Secondly, combined with previous studies, the charge collection mechanism of SOIMOSFET in SEE is analyzed. Through theoretical analysis and numerical simulation, adynamic SEE model of charge collection for SOI MOSFET with the consideration ofparasitic bipolar effect is developed. Finally, the model is verified by comparing the datawith TCAD simulation for the same devices, and the effecting factors are analyzed.