Design And Research Of Aging Prediction Sensor In Digital Integrated Circuit

With the semiconductor manufacturing process entering the nano-scale,integrated circuit integration and performance continue to increase,resulting in the reliability of the circuit becomes more and more serious,and the aging effect is one of the important reasons affecting the reliability of the circuit.In particular,circuit aging failures due to negative bias temperature instability effects.Firstly,the thesis introduces the research significance and background of circuit aging prediction,including the development history of integrated circuits and the impact of aging on the reliability of the circuit,as well as the research status at home and abroad.In addition,the physical mechanism of circuit aging is analyzed in detail,the working principles of two aging protection measures,aging detection and aging prediction are introduced.Then three classical aging prediction sensors are introduced,and their functions are analyzed in detail.At the same time,the shortcomings of each sensor are also pointed out.Secondly,To solve the disadvantages of the previous sensors,such as a single function,the thesis proposes an anti-aging,floating point avoiding and self-locking aging prediction sensor structures.The delay element structure in the sensor is programmable and can be resist aging,the stability checker part can be self-locking,and at the same time,the floating point problem can be solved.On the premise of ensuring the prediction of aging,the aging prediction sensor proposed in this thesis is more abundant than other aging prediction sensors,and has obvious advantages.In addition,in view of the fact that most of the stability checker structures do not have the ability to resist soft errors,this thesis also proposes a stability checker structure with low overhead and anti-soft errors.The general stability checker structure uses the NOR gate structure for output.This thesis proposes to use the C unit instead of the NOR gate structure.The advantage is that the key nodes in the stability checker can be protected from soft errors without affecting the normal use of the structure,thereby improving the accuracy of the aging prediction.and only a few PMOS transistors are used for the entire structure,which greatly reduces the area overhead.Finally,the thesis uses simulation tools to simulate the proposed two structures.The experimental results verify that both structures have the function of aging prediction,and the second structure can resist soft errors to a certain extent.At the same time,comparing the area and power overhead of the two structures with other literature structures,we find that the area overhead of the aging prediction sensor structure proposed is reduced by about 21.43% compared with the classical ARSC structure;the area overhead of the proposed anti-soft error stability checker is about 31.6% lower than that of the self-locking stability checker;and the power overhead consumption of the two structures is lower than other structures.