| The progress of integrated circuit manufacturing technology brings great improvement in circuit performance and continuous decrease in manufacturing cost,but at the same time,it makes the reliability problem of integrated circuit system more severe.When the size of transistors in the integrated circuit is below 45 nm,the aging of the circuit caused by Negative Bias Temperature Instability(NBTI)is the main factor that influences the reliability of IC.In this paper,the problem of circuit aging caused by the NBTI is studied.The main work is as follows:Firstly,we introduce the basic knowledge of circuit aging and several factors that cause the aging of the circuit,and focus on the reason that the NBTI effect is the main cause of the circuit aging.Secondly,3 prediction models of NBTI effect,static NBTI model,dynamic NBTI model and long-term NBTI model are analyzed in detail.Based on the long-term NBTI effect model,the existing methods to alleviate the NBTI effect causing circuit aging are classified and introduced,and the advantages and disadvantages of these methods are compared.Thirdly,The existing transmission gate insertion technology(TG-based),which is used to mitigate the circuit aging caused by NBTI,only takes into account the aging of the circuit under the single path,without considering the correlation between the logical gates and the protected paths when acquiring the critical gates,so the critical gates are redundant.To solve this problem,after considering the correlation between the critical gates and protection paths,we define the weights,and more accurately identify the critical gates in the paths,and then protect the critical gates by inserting transmission gates.Finally,based on the ISCAS85 benchmark circuits 32 nm transistor process,the method and the existing schemes are compared,the experimental data show that the proposed method of average delay circuit aging improvement rate was 38.18%,the average area overhead compared to the existing scheme improved by 61.8%. |
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