The Design Of Terahertz Signal Generation On Standard CMOS Technology

With the rapid development of microwave communication technology,the terahertz technology more and more get people's attention,its important application in medical security prompt people spend a lot of energy to the terahertz technology research.In this paper,we design a based on silicon SMIC 0.13 um CMOS process of terahertz signal generator.Terahertz signal generator includes two important components: an oscillator and a frequency multiplier.Terahertz signal generator in this design can achieve lots of advantages such as low cost,small volume,high integration,easy to carry,etc,and can realize stable signal output.Oscillator uses the ring oscillator structure,and by design the oscillator in slice of ushaped ground coplanar waveguide structure,we can get low loss,high quality factor of the equivalent inductance.Ring oscillator designed in this paper is based on the theory of classical oscillator and improves the structure of inductance to get the loss smaller,makes the circuit can achieve stable oscillation output at a higher frequency.This paper implementes the ring oscillator output frequency stability in 55 GHZ,the power is 22 mW.Frequency multiplier uses two cathode grounding diode parallel balanced doubler structure,the advantage is that can improve the output power in silicon CMOS technology.In this paper,the multiplier's nonlinear devices are schottky barrier diodes.The schottky diodesilicon's area is smaller,and it has lager cathode contact area,which reduces the series resistance.This paper adopts two grounded cathode diode parallel balance doubler structure can realize the double frequency output power to achieve 2 dBm.