Research And Design Of The Millimeter-wave Frequency Multiplier

With the development of millimeter-wave band communication system, its working frequencygets higher and higher. High stability and good phase characteristics of millimeter-wave systemsource are essential. It is hard to get the millimeter-wave frequency source directly, however, themillimeter-wave multiplier could generate the high output frequency signal through the low inputfrequency signal. In this way, the millimeter-wave multiplier could be designed using the moremature process. Millimeter-wave multiplier is generally used in millimeter-wave system, and it isthe key module of millimeter-wave devices such as frequency synthesizer and multiplier chain. Inrecent years, frequency multiplier is widely used in the millimeter-wave local oscillator of asuperheterodyne receiver. With the development of frequency multiplier, researchers both at homeand abroad focus on the study of frequency multiplier. The main work of this paper is to design twokinds of frequency multipliers using the advanced GaAs technology and the mature silicon CMOStechnology respectively.In this paper, the development of millimeter-wave frequency multiplier both at home andabroad is investigated, then the pros and cons of the commonly used topologies are discussed, anddetermined the circuit topology structure of this paper. At the same time, the theory of the activefrequency multiplier is analyzed. Electromagnetic simulation and optimization on critical passivecomponents such as transmission line, the inductance using HFSS and ADS momentum is studiedand it is the precondition of the layout design.One kind of millimeter-wave frequency multiplier with ultra compact size is designed usingthe TSMC90nm CMOS technology and it consumes low power. The multiplier generates theharmonics of the input fundamental frequency through an active transistor and suppresses theunwanted signals at the output port. The advantages of this multiplier are low conversion loss,compact structure, small chip size, and simple circuit topology. After the DRC, LVS, andpost-simulation, for an input fundamental frequency of27~33GHz, the post-simulated results aregiven in the below: the conversion loss is less than5dB, the fundamental rejection is over25dB.The total power consumption is9mW when the gate bias voltage is0.45V and drain bias voltage is1.2V. The chip size including pad is0.27mm2.The other one kind of active single-ended millimeter-wave frequency multiplier in this paper isdesigned based on the GaAs process and its output frequency is54~66GHz. Electromagneticsimulation on the whole circuit is carried out, and it shows good performance. For a fundamentalinput frequency of27~33GHz, this frequency doubler demonstrates an output power beyond0 dBm, the fundamental rejection is beyond15dB and the third harmonic frequency rejection is over25dB. The total size of this compact chip is0.529mm2．...