Analysis And Design Of Silicon Based Mm-Wave Frequency Source Key Circuit

With the rapid development of modern mobile communication technology,in order to meet the rapid growth of wireless data traffic,wireless communication systems require faster data transmission rates.Industry has always been the pursuit of highly integrated,low-cost wireless transceivers.Due to the continuous development of integrated circuit technology,Due to the continuous development of integrated circuit technology,the transistor size is getting smaller the cut-off frequency is getting higher,the complementary metal oxide(CMOS)has been applied in millimeter wave due to its high integration,low cost and low power consumption.To be more concerned about,future5G communications have high requirements for frequency generation in the millimeter-wave band,requiring millimeter-wave frequency sources with high bandwidth and very low phase noise.This paper focuses on key circuit research in CMOS millimeter-wave frequency sources to solve the problem of bandwidth and phase noise in millimeter-wave frequency sources.This paper first introduces each module in the frequency source and the performance index of each module in the frequency source,and analyzes the important role of frequency multiplier and frequency divider in frequency sources.Wideband and low power consumption the frequency multiplier and frequency divider are needed to implement a high-performance synthesizer.For the application of fractional-N PLL,this paper simulates a 40-47 frequency multimode divider based on the 65nm standard CMOS process.The maximum operating frequency is 6GHz.For the difficult design of high-frequency frequency sources,this paper designs an injection-locked frequency multiplier based on the 65nm standard CMOS technology,increases its locking range by reducing the quality factor of the resonator.Described in detail the schematic of the circuit simulation,layout design and post-simulation,introduce the chip test environment.The injection-locked frequency multiplier's chip area is 0.56mm~2,power consumption is4.6mW,the locking range is 23.4-27.42GHz at 0dBm input power.For the problem of the high frequency divider with wide narrow and large power consumption,this paper designs a broadband low-power injection lock divider chip based on 65nm standard CMOS technology,the chip area is 0.07mm~2.The use of transformer-based fourth-order resonator to enhance the frequency divider bandwidth,eliminating the tail current source of the circuit to reduce the power consumption of the divider and greatly improves the quality factor of the divider.The test results show that the divider's the locking range is 32.3-61.9GHz at 0dBm input power,power consumption is only1.2mW,which corresponds to a FoM of 24.7GHz/mW.The design of frequency divider and frequency multiplier chip provides many ideas for the design of millimeter wave frequency source circuit,which is of great significance for improving the performance of millimeter wave frequency source.