Research And Design Of Measurement System For RRAM Array

With the development of semiconductor technology,it becomes difficult to miniaturize transistor size into a greater number of levels.People need improve the storage density of memory by looking for new semiconductor materials or finding new Integration Methods.Resistive switching Random Access Memory(RRAM),which stores data using the changes in electrical resistance,rather than electrons,is expected to replace the flash memory as the next generation nonvolatile memory because of its simple structure,low operating voltage,high erase/write speed,high storage potential and compatibility with traditional CMOS process.In recent years,people have accelerated the pace of RRAM research.It is predicted that RRAM will begin to be mass produced by 2020,but there is no commercial product specifically designed for resistive memory measurement,so the development of the measurement system for RRAM becomes very important.There are some shortcomings of the existing semiconductor test equipment and the current detection methods using on RRAM test.This paper aims to design a measurement system for RRAM array test.Finally,we test the performance of the RRAM chip designed by IMECAS using this measurement system,which verify the practicality of the measurement system.The main work includes analysis of measurement requirements,study of the measurement methods for RRAM test,design of the system circuit schematic and PCB.