Research Of High Voltage Power Integrated Circuit ESD Protection Chip

With the wide application of automotive electronics, LED drive circuit, liquid crystal display, fluorescent lamp, electronic ballast and motor drive circuit, high voltage power integrated circuit(HVIC) is used more and more widely, the demand is also growing. But the power integrated circuits in the manufacturing, packaging, testing, transport and use process will be affected by a large number of ESD events. ESD has become one of the important reliability issues which restrict the development of HVIC. In recent years, a large number of research articles have been published for the ininput and output pads ESD protection of the low voltage IC, RF, microwave IC and RF power LDMOS, all low voltage IC and low voltage power integrated circuits, the I/O ports are used all kinds of ESD protection circuit, but the research for HVIC high voltage output port ESD protection circuit at home and abroad is still in initial stage.In this paper, a bidirectional ESD protection device structure with high maintaining voltage and large discharge current for HVIC have been presented by analysis and research. and the device output characteristic curve under the ESD pulse with non-snapback and high maintain voltage characteristic; At the same time, uses the multi-cell structure enhances the device with high discharge current, so as to the same chip area than in the past commonly used low-voltage transient voltage suppression diodes(TVS) about ten times higher discharge current, greatly improves the high voltage output ports ESD protection ability of HVIC. The developmented HVIC ESD protection devices with high maintain voltage and large discharge current combined with mature technology of the low voltage port ESD protection, so as to realize the all chip pins ESD protection for HVIC which work in 220 V mains power, raise the reliability of high voltage power integrated circuits.This paper uses Silvaco-TCAD tools to simulate corresponding device structure and parameters, Finally, completes intellectual property application of the patent “Bidirectional ESD integrated protection device with wide range high current and high maintain voltage and its preparation method” and master’s thesis writing.