SiC MOSFET PSpice Modeling And Its Application

With the further research and marketing of the third generation wide-band gap silicon carbide semiconductor devices, the excellent performance of SiC MOSFET attracts people’s attention. In order to provide simulation models which can reflect their working characteristics in PSpice and give simulation reference to power electronics designers, this thesis forcus on the study of SiC MOSFET PSpice models and both single and half-bridge module PSpice models for specific SiC MOSFET types are established. At the same time, reverse I-V characteristics model is added on the basis of the original model and further SiC schottky diode PSpice temperature-dependent models are established.Firstly, this paper introduced the research background and research status of SiC MOSFET modeling and the basic SiC MOSFET modeling methods and modeling flow in the PSpice software.Then a SiC MOSFET PSpice model based on Si MOSFET core(based Si MOSFET core type, BSMCT) is proposed. The static characteristics are described using level 1 MOSFET core connected with resistors. Model parameters’effect to the static characteristics of SiC MOSFET is studied through simulation and a kind of parameter extraction and modification method based on datasheet is proposed. Next, in order to accurately describe dynamic characteristics of SiC MOSFET, a new gate-drain capacitor model is presented which can quantitative model parameters’ influence to the value of gate-drain capacitance. Model parameters are given for 1200V/33A single SiC MOSFET CMF20120D in this thesis and the comparison between static characteristics simulation results and datasheet results are given.A SiC MOSFET PSpice model based on voltage-controlled current source is proposed. Its static characteristics are described by current expressions directly and a non-switch gate-drain capacitor model is presented. The feasibility of the non-switch gate-drain capacitor model is verified by simulation. Model parameters of 1200V/33A single SiC MOSFET CMF20120D and 1200V/300A half-bridge SiC MOSFET module are given correspondingly in this thesis. The comparison between static characteristics simulation results and datasheet results are given.SiC diode is the first commercial SiC device. A new SiC schottky diode PSpice model which contains reverse I-V characteristics is proposed based on the original SiC schottky diode model. Model parameters of 600V/4A SiC schottky diode C3D02060A and 650V/50A SiC schottky diode C5D50065D are given. The comparison between static characteristics simulation results and datasheet results are given respondingly.Finally, a double-pulse test experiment platform is designed in this paper. Then, both experiment and simulation switching characteristics of SiC MOSFET and SiC schottky diode are tested. The consistency of experiment and simulation results is compared and analyzed.