Modeling And Simulation Application Of SiC MOSFET Power Devices

SiC MOSFETs(silicon carbide metal-oxide-semiconductor field-effect transistor)have attracted wide attention from researchers at home and abroad because of their superior characteristics.Converters using SiC devices can have higher switching frequency,adapt to high-temperature operation,and achieve high power density.In some applications,the performance of the power conversion device can be significantly improved.In order to make the SiC MOSFET have a better basis and reliability in practical applications,it provides application references for power electronics designers.This article focuses on the relevant models of SiC MOSFETs,and establishes models under different environments of PSpice and Matlab/Simulink.(1)Compared with Si MOSFETs,SiC MOSFETs have lower power losses and are more suitable for high voltage,high frequency,and high temperature applications.Based on the understanding of the terminal behavior of power MOSFET discrete devices,this paper studies and models the CMF20120 D Si C MOSFET power devices manufactured by Cree,USA.(2)A method for extracting characteristic parameters of SiC MOSFET devices is given.Based on the definition of related characteristics of SiC MOSFETs and the technical manual provided by the manufacturer,a SiC MOSFET model based on PSpice established.The temperature-controlled voltage source and the temperature-controlled current source are introduced to compensate for temperature characteristics,making the model effective over a wide temperature range.The correctness of the model was verified by the technical manual and the double-pulse circuit basis.(3)Based on the theoretical analysis,a semi-physical static model of SiC MOSFET is established on the basis of the static characteristics of traditional Si-based lateral double-injection MOSFETs.The process of modeling the core cell,threshold voltage,and drain current compensation is elaborated,and a complete SiC MOSFET static model is established.Based on the analysis of MOSFET gate equivalent circuit and SiC MOSFET switching characteristics,a dynamic analysis model of SiC MOSFET is established.The model was verified by simulation and its accuracy was analyzed.(4)Build a simulation model suitable for Matlab application,apply the model to single-phase inverter,and carry out simulation research in Matlab/Simulink.By applying a high-frequency method,observe the turn-on and turn-off transient waveforms and the steady-state output waveform of the Si C MOSFET,and verify the correctness and availability of the SiC MOSFET model.And verify the stability of SiC MOSFET under high frequency conditions.