The Modeling And Characteristic Analyses Of Schottky Diode Based On RF CMOS Technology

With fast development of the radio frequency wireless communications industry, the demand for high performance but low cost RF solutions is rising sharply. As important elements in RF circuits, passive devices have drawn much attention. Schottky Barrier Diode (SBD) is one of the important components in the RF circuits. It's a kind of majority carrier device with improved high frequency capability owing to the absence of minority carrier storage. Its applications include RF signal rectification/detection, mixing and imaging.When the circuits is operating in the RF range, the simple SPICE diode model is insufficient to describe the integrated Schottky diode characteristics due to the bulk effects introduced by the lossy Si substrate. In this work, we design and fabricate SBD n-type CoSi2-Si SBD in SMIC 0.18μm RF CMOS process. And based on the DC and RF measured data, a novel accurate Schottky diode model was developed and relevant parameter extraction method is also introduced in detail in this thesis. It's shown that the suggested novel model fits the measurement very well for different voltage biases over wide frequency range of 0.1GHz to 40GHz.The research of RF CMOS technology in the paper can offer some theoretic guidance for applying SBD in the RFIC. The optimization of the SBD layout has practical direction to improve the performance of devices. The modeling of DC and RF can provide basis to take further analyses of HF device modeling.