Research Of SiC MOSFET PSpice Modeling

With the rapid development of power electronics science and technology,the third generation of semiconductor materials represented by silicon carbide materials,with its high critical electric field,wide prohibition zone,high thermal conductivity,high saturation current and other advantages of the community has become the focus of research,silicon carbide metal oxide semiconductor field effect transistor(Silicon Carbide)MetalSemiconductor Field Transistor Effect,SiC MOSFET)is also widely used in aerospace,metal smelting,Rail transit and other areas that need to work in a special working environment.The accurate SiC MOSFET device model can simplify the application design process of electronic circuit and provide reliable guarantee for the simulation results of the circuit.This paper mainly studies the modeling method of the sic MOSFET PSpice model,and establishes the PSpice model.Firstly,the characteristics of SiC MOSFET device structure,traditional model structure and existing model building method sittered out,through analysis,an equivalent model structure that is compensated by the core MOS,body diodes,resistors and capacitors.After the analysis of the working principle of the Shichman-Hodoges model,the parameters of MOSFET device model are classified by process and electrical characteristics,and the method of extracting model parameters through the data input of the device characteristic curve is established.The model parameter values of SiC MOSFET extracted by the model editor use the model description language to establish a simple SiC MOSFET PSpice model.Then three different SiC MOSFET device samples were selected,using the semi-physical model method,sub-circuit macro model model modeling method and model description language modeling method,the device model of the sample was studied,and the equivalent circuit PSpice model was established.By simulating each equivalent circuit model by using static simulation circuits,the advantages and disadvantages of using each modeling method to model different structural units of SiC MOSFET are analyzed according to the static simulation results of each model.Therefore,a new modeling concept should be used to match the PSpice model,and a PSpice model building method combining semi-physical equivalent circuit with model description language is established.Finally,the PSpice model was established from the core MOS,resistor,capacitor and body diode four units of the Cree model C2M0045170 D SiC MOSFET sample,which was combined with the model description language using the method of semi-physical equivalent circuit.Using static simulation circuit,the static characteristics of the PSpice model are simulated under the temperature conditions of-40?,25? and 150? respectively,and the simulation results are compared with the static characteristic curve in the sample datasheet,and the static characteristics of the model are verified.The official model of PSpice model and sample is applied to the dual-pulse test circuit and the voltagetype single-phase full-bridge inverter circuit,the dynamic switch test and the high frequency characteristic simulation test are carried out,and the dynamic characteristics and convergence of the model are verified by comparing the simulation results of the two models.The static and dynamic characteristic curves of the PSpice model are basically consistent with the sample data sheet and simulation curve,and have higher convergence than the official sample model,and the verification results from these three aspects further illustrate the accuracy of the model built by using the semi-physical description language combination method.