SiC MOSFET Device Modeling And Simulation Base On Variable Temperature Parameter Model

Silicon carbide (SiC) is one of the new power semiconductor material with band gap, high breakdown field, high thermal conductivity, high carrier drift velocity, high Power density and many other advantages. SiC-based power semiconductor devices with superior performances has attracted wide attention. SiC MOSFET has become the focus of attention. With the research deepening, building accurate SiC MOSFET device model is the key to power electronic circuit simulation.The main studies of this dissertation are SiC MOSFET device modeling. The work in this thesis is part of the project of "Preparation and Key Technologies Research in Application Characteristic of 1200V SiC MOSFET" of Smart Grid Research Institute(SGRI). The main studies of this dissertation are SiC MOSFET device modeling.In this thesis, a large number of existing power device model are in-depth study, physical models and Traditiona Si MOSFET model have not been adopted,the generally accepted method was adopted.Then, concentrate on SiC MOSFET modeling.Take the second-generation SiC MOSFET of CREE for example,build a equivalent circuit model according to Spice model provided by CREE.Static and dynamic characteristics tests of the Spice model were taken in this thesis,and set the results as the standard.It is described detailedly how to extract the parameters and build the temperature dependent resistance,temperature dependent voltage source and current source in the PSpice software.It is guidance for the future research.Compared the simulation results of the static model and the simulation results of Spice model at different temperature points,to verify the validity and accuracy of the model under different temperature points. Finally, to introduction the dynamic modeling.According to the knowledge of semiconductor device theory,the thesis classified The body diode modeling as dynamic modeling part,then the method becomes more justified and science.The simulation results match well with the experimental results, it is perfect to verify the accuracy of the model.