Research On Physics-Based Model Parameters Extraction Of SiC Schottky Barrier Diode

Compared with the traditional power semiconductor device material silicon and gallium arsenide,silicon carbide(SiC)material has a stronger resistance to chemical corrosion,greater hardness,greater forbidden band width,faster saturation speed,higher thermal conductivity,higher critical breakdown electric field,and its material preparation and production process are also mature.Therefore,as a wide band gap semiconductor material,SiC has great potential in the high temperature,high frequency,high power and other fields.While the increase development of power supply system,the rectifier devices need to be have more excellent characteristics.A good rectifier device's breakdown voltage should be higher,less on-resistance,faster switching,and so on.So SiC power devices have a good development prospects which have these excellent characteristics.The most mature SiC power devices on the market today are silicon carbide Schottky diodes(SiC SBD).However,due to the high cost and vulnerability of SiC SBD,the design of power electronic systems must rely on computer simulation techniques.The accuracy of power electronic circuit simulation technology is related to many factors,and the most important factors include the physical model of the device and the physical model parameters of the device.In the case of accurate physical model of the device,the extraction of accurate physical model parameters is particularly important for the design of power electronic circuits.In this paper,SiC Schottky diode as the research object,select the Saber simulation software with high accuracy of the model to simulate it.The SiC power diode model in Saber simulation software is based on the Mantooth unified model,which can accurately describe the working characteristics of forward recovery and reverse recovery and other operating characteristics.The critical parameters of the SiC Schottky diodes model are determined,which are based on the analysis of working mechanism,static characteristics,dynamic characteristics and the physics-based model.A method for extracting parameters of SiC Schottky diodes is proposed.In this method,the internal key model parameters of SiC Schottky diodes are also indentified by the method of using both Matlab and Saber softwares.These two kinds of softwares are used to compare the simulation waveformand the experiment waveform,the correlation coefficient of the simulation waveform and the experiment waveform,and the number of iterations as objective functions,and to optimize with the improved particle swarm algorithm.In this method,the reverse recovery waveforms,which characterize the internal mechanism of SiC Schottky diodes,are used to identify the external characteristics.The Matlab software is called by the AIM command in the Saber software,and the simulation data is transferred through the Cosimulation data interface.The parameters of model initialized in Matlab are transferred to Saber for simulation,then the simulation data is input into Matlab to judge the similarity with the experimental data.The improved particle swarm optimization algorithm is used to optimize the model parameters,and the optimized model parameters are passed to Saber to continue simulation,The optimization cycle is realized by AIM languge programming.Then,when the simulated waveforms are highly similar to the experimental waveforms,the required SiC Schottky diode model parameters are extracted.Finally,a verification method is proposed.the model parameters of SiC Schottky diode parameter are accurately extracted and proved to be effective.