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Design Of Motor Driver Power IC And Investigation Of IGBT Turn-on Process

Posted on:2015-03-26Degree:MasterType:Thesis
Country:ChinaCandidate:H T WuFull Text:PDF
GTID:2298330467479324Subject:Electronics and Communications Engineering
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With the advent of the worldwide energy crisis, governments are actively promoting energy-saving technologies for the purpose of sustainable economic development. Energy efficient has become an important direction for future development of electronic products. Currently, the power consumption has been gradually implemented in the global standard, the world has been on home appliances and consumer electronic products standby power consumption and efficiency began saving more stringent requirements. Power semiconductor devices and power integrated circuits in the power, energy, aerospace and consumer electronics plays an integral role, therefore, the research and development of power semiconductor devices and power integrated circuits, will have a pivotal position.The main work and innovations of this thesis include:1、on the power IGBT discretes conducted in-depth research. Focus on the IGBT switching characteristics and safe operating area. For academia and industry common problems existing in-depth research. TCAD simulation tools and flows through the chip test, analysis of common problems encountered during the IGBT turn on-turn the IGBT process, not fall collector voltage Vce phenomenon occurs in a short time. By comparing the research literature, simulation and testing, the authors propose a mechanism IGBT turn perfectly explains the anomaly appears above, and the relevant parameters of the simulation, which proposed to reduce IGBT switching power new ideas.2、the design of a500V three-phase motor drive chip-based BCD process. The chip on the pass PN junction isolation, the power supply circuit, low voltage control logic,20KHz oscillator, PWM control circuit, overheat, overcurrent, undervoltage protection circuit, high and low side driver circuit, and a bootstrap diode composed of six LDMOS the three-phase half-bridge driver circuits integrated on the same chip, to achieve a high degree of integration, miniaturization and intelligent. Meanwhile, for the application of energy-saving inverter air conditioner, developed with independent intellectual property rights of500V three-phase motor drive smart power chip products to replace imports, to achieve localization. Compared with more expensive Toshiba’s SOI process design, this paper is relatively cheap and mature BCD epitaxial process design, although difficult, but the cost can be reduced a lot. In addition, the creatively designed tube structure NLDMOS, which reduces the number of masks, but also saves the chip area.
Keywords/Search Tags:Power semiconductor device, IGBT, Power integrated circuit, LDMOS, chip of Three-phase motor driver
PDF Full Text Request
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