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A Design Of Power IGBT Driver Circuit

Posted on:2018-06-14Degree:MasterType:Thesis
Country:ChinaCandidate:S D RenFull Text:PDF
GTID:2348330512983023Subject:Engineering
Abstract/Summary:PDF Full Text Request
High-power IGBT has been widely used in medium and high power,medium and low frequency converters for its low on-resistance,high current characteristics.It is significant to provide the low cost,and high reliability gate-level driver circuit for low-voltage control signal and power-side electrical isolation and also to ensure current and voltage demands during IGBT operation.Based on the intelligent power module project which cooperates with the company,this paper designs a dual-channel half-bridge driver chip based on CSMC's high-voltage BCD process.The chip has high reliability,high current output capability and high operating frequencyAccording to the actual application requirements and IGBT safety work conditions,the driver chip parameters as follows: Input interface compatible with 3.3V/5V CMOS/TTL signal;the output drive voltage amplitude is 15V;the output drive current si ±1A;the normal operating voltage range is 13.5~16.5V;the safe working temperature is-40~125?;the maximum operating frequency is 100kHz;the maximum voltage that half bridge needs is 600 V.the chip with a single 15 V power supply;high and low channel signal transmission time difference is less than 50 ns.The chip also integrates the undervoltage protection circuit,over current protection circuit,over temperature protection circuit and the error logic control circuit.Firstly,in this paper,the parameters of the chip are determined according to the practical application requirements and working characteristics of the IGBT.The overall structure and working principle of the driver chip are introduced.And then focus on the circuits including the voltage reference source circuit,input interface circuit,undervoltage protection circuit,high voltage level shift circuit,low-end delay circuit for a detailed analysis and design,After verifying the characteristics of each sub-circuit meeting the requirements of the indicators,then set up the overall chip simulation environment,verify the transient function,bootstrap circuit function,the correctness of the protection function and the accuracy of the chip parameters.
Keywords/Search Tags:power IGBT, gate drive, single power supply, level shift, reliability
PDF Full Text Request
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