600 V Integrated Intelligent Power Driver Chip Design And Simulation

Smart power driver IC (SPIC) have a very important position in power electronicstechnology.It can be increase the system’s reliability and reduce its weight,cost andsize， its very important to automotive electronics, industrial engineering,communications equipment, etc.In this paper,a three-phase power MOS gate driver IC will be prepare.It design forautomotive applications, this SPIC design sepcifications very suitable for applications:maximum output drive current up to1A, the highest bias voltage reaches600V.The chipproduction process and achieve satisfactory results. In this chip development process,the author completed the development of the dead time compensation circuit detectionand protection circuits and interface circuits. A critical analysis for these circuits, thechip can work properly under special circumstances, to ensure the stability of thesystem.Integration of the existing mature technology, design and production costs low,specially designed for High Voltage LDMOS power optimization above the key design,add a current limiting resistor to further reduce power consumption in response to anational low-carbon life policy.We make the layout when circuit design is over, use the foundries mature BCDprocess for chip design. The LDMOS is very excellent performance in high-voltagedevices,it adopt RESURF technology. Thin epitaxial layer and for the design of theBCD process uses an N buried layer to increase the pressure value of the device bycontrolling the length of the N buried layer, the doping concentration. Through softwareemulation, to ensure the LDMOS devices as far as possible meet the requirements of theon-resistance, so that the thin epitaxial layer. Process to achieve cost will be reduced.In layout design, we use of advanced isolation technology to achieve the separationof the SPIC chip internal high-voltage circuit and low voltage circuits, to ensure chipreliability and stability.