DDR3Memory Module High Speed PCB Design

In computer hardware circuit design, the interconnect design for memorycontroller and DRAMs are key to the whole computer system design. System’sstable operation highly rely on the memory modules.The rapid development ofcomputer, cell phone, networks and communications is the driving source formemory’s improving, especially in big data, cloud processing application area.You need to collect large amounts of data and real time processing. Or storagebefore analysis and processing. Memory’s frequency,voltage,bus bandwidth andother technical parameters continue to improve and development which aims toincrease memory bandwidth and data transfer rates to meet rising CPUbandwidth and performance requirements. To avoid becoming a bottleneck inhigh speed operation. The thesis focused on DDR3high speed PCB design.It’snot only hot spot in hardware design, but also can lay a solid foundation andreference for future DDR4memory products.This paper firstly analyze signal integrity and power integrity theory andapplied to high speed PCB design which including component placement,routing, topology, laminated structure, impedance control and power divisionand so on. Secondly, analyzed DRAMs chip structure, working principle,electrical characteristics and timing requirements. Again, propose preliminarydesign based on customer demand for DDR3memory modules. Pre-simulationto analyse DDR3address/control/command/clock/data signals with Hspiceand Hyperlynx. The signals timing and signal integrity are good. Then list DDR3high speed PCB design rules and routing requirements. Complete the circuitschematic and PCB layout. Post-simulation to double confirm compliance with design specifications. Finally, produce the engineering samples and finish all testitems which contains Power Noise Measurement, System read and write test,RMT testing, SI measurements with high-speed oscilloscope, Test results werenot violates JEDEC design specifications.