The Optimization Design And Realization Of Single-poly Non-volatile Memory For Passive RFID Tag IC

Radio frequency identification (RFID) is a kind of wireless non-contactautomatic identification technology. It is a new technology， including wirelesscommunication, integrated circuit and other varieties of disciplines. It can identifytags automatically by using radio frequency signal to realize the two-way datatransmission. Currently, RFID technology is widely used in many kinds of fields, suchas logistics management, transportation, health care, identification and so on.Compared with other related technologies, RFID tags have many advantages ofwaterproof，anti-interference, high temperature, long service life, long-distanceidentification, large storage capacity, reusable, high security, etc.RFID system is made up of electronic tag, reader and PC terminal. Electronic tagis the core of RFID system. The performance and the cost of electronic tag determinethe fate of RFID technology. They have an influence on whether this new technologycan be widely used. Electronic tag chip includes analog front-end, digital logic controlcircuit and non-volatile memory. The power and timing control signal are provided byanalog front-end. At the same time, the data of memory is also transmitted by analogfront-end. According to the control signals given by analog front-end, digital logiccontrol circuit generates control signals to made the entire chip work properly andorderly. For the storable electronic tags, non-volatile memory is the most importantpart of electronic tag, it is used to store users’ or products’ information. The workingof whole RFID system is focus on non-volatile memory.In this paper, an improved256bits high-performance and low-cost single-polynon-volatile memory (SPNVM), based on UMC0.18μm standard CMOS process, isdesigned in accordance with embedded non-volatile memory EEPROM. Theperformance index and design direction of memory for passive RFID tag aredetermined by a detailed analysis of the working principle, structure and performanceof EEPROM. In view of operation voltage, efficiency, speed and power consumption,many optimization designs have been made to improve the the corresponding circuitmodule of memory, they include memory array, high voltage generating circuit andsense amplifier, etc. These measures make the memory to be well satisfied therequirements of RFID system.