Resistive Random Access Memory Characters Research And Reading Writing Circuit Design

Resistive random access memory with many advantages like low-voltage, high-speed,low-power, simple structure, compatible with CMOS process, low-cost, high-density and has winmore and more widespread concern, is considered to be a next generation new type of memory thatwill replace FLASH memory. And at the same time the development of nanoelectronics hasbrought new opportunities to the development of integrated circuits, for resistance change memoryas a great hope for a new type of memory, it will be widely used in many fields. At present, inorder to improve the production of RRAM as a general random access memory, need to befamiliar with the characters of RRAM and design appropriate driving circuit. This paper’s mainwork is resistive random access memory characters research and reading writing circuit design.First, analyses resistive random access memory principle and performance parameters withRRAM memory element. Classified RRAM into many types, research different materials that canused as RRAM device. Combined RRAM cell study several common RRAM cell structure andcompare the advantages and disadvantages of various structures, analysis the factors that mayinfluence RRAM performance parameters.Second, research several resistance change mechanisms and several modeling methods ofRRAM memory cell. Because there many materials can used as RRAM device, different materialhas different resistance change mechanisms. Analyzed different resistance change mechanismbased on different RRAM material I-V characteristic curve. In order to facilitate the RRAM deviceintegrated and design, proposed modeling method of RRAM.Finial, designed a read and write circuit that used on RRAM cell. Proposed a module structureof read and writ circuit, with levels and modular method to design read and write circuit.According to the RRAM cell special I-V characteristic curve, designed the logic part of the readand write circuit from the perspective of pulse width and the analog circuit part of the circuit fromthe perspective of pulse amplitude and simulate it to verify its correctness. At the same time, alsogiven a optimization RRAM read and write circuit and a operation method which can improve theaccuracy of operation and it can increase the service life of RRAM device with reduce the frequency of writing operation.